Nowadays, microelectronic industries are developed
in production process and materials for high performance integrated
circuits. Wire bonding development is sequence according to
reduce integrated size, lowest available cost and remain the
process standard. The bonding quality between Au wire and Al
pad metallization on ICs is depended on several parameters.
This thesis investigates the effect of these parameters which
affect the optimize conditions. The resulting data from analytical
statistic program is related to Au wire diameter and shear force.
The high quality bonding due to optimized contact area between
Au wire and Al pad can apply to the ICs applications with small
both contact area and contact spacing by decreasing Au wire
diameter. Consequently these advantages are able to use for
packaging with some type of BGA and TQFP.
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