This paper studied on d.c. hysteresis effect
and nonvolatile memory device by using Y-Ba-Cu-O superconducting
material. The relation between output voltage and magnetic field
is discussed. It's found that dc hysteresis effect and magnetic
memory effect occur simultanously if the magnetic field is higher
than critical field. This memory effect is the result from persistent
current in superconductor. The memory of magnetic field can
be generated or substracted by the external magnetic induction.
It can be observed low state or high state by measuring output
voltage depended on persistent current. Moreover the memory
can keep data without applying any power supplies.This property
is called nonvolatile.
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