The development of CMOIS transistor to be the basic cell of gate array
Abstract

It is better to design the standard cell circuit which is developed to be a desirable logic function with the CMOIS structure transistor. Because of this structure of transistor uses smaller area on the silicon wafer than the CMOS transistor design more than 12.5% with the same circuit operation. The general standard cell circuits in gate array design consist of three sections. The first is the input circuits which use to receive the input signal and drive it to the internal circuits in the form of inverting or noninverting output signal. The second is the output driver circuits which use to drive the output signal of the internal circuit to the next state with the suitable voltage and current. And the last is the operation circuits which use to fit the desirable function of the designer. All of them are designed and fabricated with the nonsymmetrical design of CMOIS transistor. Then its performance, as the transient response, the sink and source current, the output voltage, and operation functions are measured. The experimental results show that the circuit can be operated between 4 to 15 volts. The transient response characteristics of the circuits are opposite with the CMOS circuits. In other words, the rise time of the output signal (tr) is less than the fall time (tf). Nevertheless, the desirable functions are the same as the functions of CMOS circuits.

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