Nowadays, the other semiconducting
materials are studied for using instead of Si and GaAs. Diamond
is one of the most interesting material because of the better
physical properties such as high charge-carrier mobility, high
breakdown voltage and high thermal conductivity. Furthermore,
wide energy band of diamond (5.5 eV) is suitable for operating
in high temperature. So synthesized semiconducting diamond is
developed for electronic devices. In some case, the structure
of some electronic devices are very complex or being integrated
circuit. So it is necessary to determine the area of pattern
form of synthesized diamond films. In this thesis, a study on
selective deposition of semiconducting diamond films is presented
for leading to develope diamond electronic devices. Surface
preparation of silicon substrate that effects to the diamond
nucleation, is varied the different conditions. The important
parameters of fundamental circuit design are studied by designing
patterns of diamond films. For the pattern fabrication, fabrication
techniques are used differently such as silicondioxide mask
technique or Mirror-polished technique in order to protect diamond
films generation. With the low cost and high safety of thermal
(Chemical vapor deposition) CVD, the synthesized diamond films
has high purity as well known that can be studied its surface
by microscope and Scanning Electron Microscopy (SEM). With respect
to structure and properties, can be characterized by X-ray diffraction
and Raman spectroscopy.From the experiments were found that
the best method for fabricating diamond film patterns are using
silicondioxide mask technique compared with using mirror-polished
Si for synthesized diamond films protection.
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