Consequently semiconducting diamond film can
be synthesized with ethylalcohol by thermal CVD method[1]. This
paper presents the application of diamond films being diode
with a metal / intrinsic diamond semiconductor / p-type diamond
semiconductor structure (MIS diode). Aluminium and Boron are
used as metal contact and p-type doped impurity respectively.
Effect of Boron-doped concentration and the thickness of intrinsic
film are investigated. It's found that the reverse breakdown
voltage is increased if the thickness of intrinsic layer is
increased. And the forward current is decreased if the boron-doped
concentration is decreased.
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