This thesis presents the study
and development on p-type diamond film to heterojunction semiconductor
diode device. The study on p-type diamond film systhesis was
initiated by low pressure thermal CVD method, which is very
fascinating both in research and in commerce not only the most
inexpensive fabrication apparatus, low operation cost, high
level of safety, and also pure synthesized diamond. Furthermore,
diamond thin films, however, are fabricated on nondiamond substrates
in the manner of cost-saving utilization and make more opportunities
for potential applications in comparision with conventianal
synthesis using high pressure and high temperature bulk diamond
process, which can unlikely make use of diamond efficiently.
In addition, the thesis also presents and study on film morphologies
from SEM. For structures and properties of film, it was studied
respectively from pattern of X-ray diffraction and Raman spectroscopy,
determination of conductivity type of film by Hot-point probe,
study on the atmosphere component gas effect on the conductive
diamond thin film formation, finally, the applications of diamond
film for electronics by the fabrication to Schottky diode device,
the development of heterojunction diode between p-type diamond
film and n-type silicon which can be operated at high temperature,
and study on the electrical property of prepared devices. The
experimental results of the fabricated diode analyzed and explained
by the aid of the proposed energy band model.
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