MOIS is a new structure of
field effect transistor. The structure and the operation are
the same as MOS transistor. The substrate of MOIS is the silicon
diffused with Au atoms to change some electronical characteristics,
so the advantage of this structure is to be constructed P-MOIS
and N-MOIS on the same substrate. The effects of Au atoms on
the electrical characteristics and the operation of MOIS devices
are reported in this thesis. Firstly, we studied the effect
of Au aatoms on the electrical characteristics of substrate.
The results show that, the temperature of 900OC , 1000OC and
1100OC diffusion of Au in 90 minutes of time. The resistivity
of substrate changes from 5 ohm-cm to 2, 200 and 550 kohm-cm.
The concentrations of Au are 9.4x1014, 1.4x1015 and 5x1015 cm-3.
Moreover the value of energy fermi level are 0.70 eV 0.60 eV
and 0.56 eV respectively. In the case of the electrical characteristics
and the operation of MOIS, at the same temperature of Au diffusion,
the operation of N-MOIS is depletion and enhancement mode with
the threshold voltage of -1.8 and 1.5 volts respectively. At
900OC diffusion of temperature, the operation of MOIS is not
occur. For P-MOIS, the operation of P-MOIS is enhancement mode
and the threshold voltage is approximately -2.2, -2.4 and -2.6
volt respectively. For the carrier mobility, the value of electron
and hole mobility are approximately 20 and 92 cm2/Vs for 1100OC
of Au diffusion.
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